PART |
Description |
Maker |
NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片
|
意法半导 STMicroelectronics N.V.
|
M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|
SST39LF016 SST39LF016-90-4I-EI SST39VF016-90-4I-EI |
(SST39VF080 / SST39VF016 / SST39LF080 / SST39LF016) 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash 7.6 mm(0.3 inch) Micro Bright Seven Segment Displays CONNECTOR ACCESSORY LED Light Bars D52 - BACKSHELL ENVIRON EMI-RFI STRT MIL 2M X 8 FLASH 2.7V PROM, 70 ns, PBGA48 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PDSO40 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PBGA48 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40 64 Mbit (x16) Multi-Purpose Flash Plus 64兆位(x16)的多功能闪存加 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 70 ns, PDSO40
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
M58MR064-ZCT M58MR064D120ZC6T M58MR064C100ZC6T M58 |
64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory 64兆位4Mb的x16插槽,复用的I / O,双行,突发1.8V电源快闪记忆
|
STMicroelectronics N.V. 意法半导
|
M27C1024-10XF7 M27C1024-12XF7 M27C1024-15XF7 M27C1 |
1-Mbit (64Kb x16) UV EPROM, 100ns 1-Mbit (64Kb x16) UV EPROM, 120ns 1-Mbit (64Kb x16) UV EPROM, 150ns 1-Mbit (64Kb x16) UV EPROM, 200ns 1-Mbit (64Kb x16) UV EPROM, 35ns 1-Mbit (64Kb x16) UV EPROM, 45ns 1-Mbit (64Kb x16) UV EPROM, 55ns 1-Mbit (64Kb x16) UV EPROM, 70ns 1-Mbit (64Kb x16) UV EPROM, 80ns 1-Mbit (64Kb x16) UV EPROM, 90ns 1-Mbit (64Kb x16) OTP EPROM, 120ns 1-Mbit (64Kb x16) OTP EPROM, 70ns 1-Mbit (64Kb x16) OTP EPROM, 90ns 1-Mbit (64Kb x16) OTP EPROM, 55ns 1-Mbit (64Kb x16) OTP EPROM, 45ns 1-Mbit (64Kb x16) OTP EPROM, 35ns 1-Mbit (64Kb x16) OTP EPROM, 150ns 1-Mbit (64Kb x16) OTP EPROM, 100ns
|
SGS Thomson Microelectronics
|
HYB18T256161AFL25 |
256-Mbit x16 GDDR2 DRAM
|
Infineon
|
HYB18T256161BF-28 |
256-Mbit x16 DDR2 SDRAM
|
http://
|
M59MR032-GCT M59MR032D120ZC6T M59MR032C100GC6T M59 |
32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
|
意法半导
|
M69KB128AA |
128 Mbit (8Mb x16) 1.8V Supply Burst PSRAM
|
STMicroelectronics
|
IC42S16800D-7TL IS42S81600D-6T IS42S81600D-6TL IS4 |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
天津新技术产业园区管理委员会 Integrated Silicon Solution, Inc
|
IS45S16800B-7TLA |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solu...
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